Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors
In this work, rapid thermal annealing was performed on InGaAs∕GaAsquantum dot infrared photodetectors(QDIPs) at different temperatures. The photoluminescence showed a blueshifted spectrum in comparison with the as-grown sample when the annealing temperature was higher than 700°C, as a result of thermal interdiffusion of the quantum dots(QDs). Correspondingly, the spectral response from the annealedQDIP exhibited a redshift. At the higher annealing temperature of 800°C, in addition to the...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Fu_Effects_of_rapid_thermal_2006.pdf||Published Version||1.11 MB||Adobe PDF|
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