Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors
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Fu, Lan; McKerracher, I.; Wong-Leung, Jennifer; Jagadish, C.; Vukmirović, N.; Harrison, P.; Tan, Hark Hoe
Description
In this work, rapid thermal annealing was performed on InGaAs∕GaAsquantum dot infrared photodetectors(QDIPs) at different temperatures. The photoluminescence showed a blueshifted spectrum in comparison with the as-grown sample when the annealing temperature was higher than 700°C, as a result of thermal interdiffusion of the quantum dots(QDs). Correspondingly, the spectral response from the annealedQDIP exhibited a redshift. At the higher annealing temperature of 800°C, in addition to the...[Show more]
Collections | ANU Research Publications |
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Date published: | 2006-06-13 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/16324 |
Source: | Journal of Applied Physics |
DOI: | 10.1063/1.2202704 |
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01_Fu_Effects_of_rapid_thermal_2006.pdf | Published Version | 1.11 MB | Adobe PDF | ![]() |
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