Fu, L.; Tan, H. H.; McKerracher, I.; Wong-Leung, J.; Jagadish, C.; Vukmirović, N.; Harrison, P.
In this work, rapid thermal annealing was performed on InGaAs∕GaAsquantum dot infrared photodetectors(QDIPs) at different temperatures. The photoluminescence showed a blueshifted spectrum in comparison with the as-grown sample when the annealing temperature was higher than 700°C, as a result of thermal interdiffusion of the quantum dots(QDs). Correspondingly, the spectral response from the annealedQDIP exhibited a redshift. At the higher annealing temperature of 800°C, in addition to the...[Show more]
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