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Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors

Fu, Lan; Tan, H. H.; McKerracher, I.; Wong-Leung, J.; Jagadish, C.; Vukmirović, N.; Harrison, P.

Description

In this work, rapid thermal annealing was performed on InGaAs∕GaAsquantum dot infrared photodetectors(QDIPs) at different temperatures. The photoluminescence showed a blueshifted spectrum in comparison with the as-grown sample when the annealing temperature was higher than 700°C, as a result of thermal interdiffusion of the quantum dots(QDs). Correspondingly, the spectral response from the annealedQDIP exhibited a redshift. At the higher annealing temperature of 800°C, in addition to the...[Show more]

CollectionsANU Research Publications
Date published: 2006-06-13
Type: Journal article
URI: http://hdl.handle.net/1885/16324
Source: Journal of Applied Physics
DOI: 10.1063/1.2202704

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