Skip navigation
Skip navigation

Direct growth of nickel disilicide nanocrystals in silicon dioxide films

Yoon, Jong-Hwan; Lee, Gyu-Hyun; Elliman, Robert G.


Nickel disilicide (NiS₂)nanocrystals (NCs) have been grown in silicon-rich oxide (SiOₓ)films ion implanted with nickel by annealing at 1100°C. It was found that NiS₂ NCs grew into well-defined single crystalline structures embedded in a SiOₓ matrix and were approximately spherical in shape. The size of NCs can be influenced by limiting either the Ni or excess Si concentration. It was found that the resulting NCs could be produced with diameters in the range from 5to40nm in the SiOₓ layers with...[Show more]

CollectionsANU Research Publications
Date published: 2006-06-13
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.2202740


File Description SizeFormat Image
01_Yoon_Direct_growth_of_nickel_2006.pdf397.11 kBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator