Large capacitance-voltage hysteresis loops in SiO[sub 2] films containing Ge nanocrystals produced by ion implantation and annealing
Metal-oxide-semiconductorstructures containing Genanocrystals (NCs) of 3–4nm diameter and 2×10¹²cm⁻² density are shown to exhibit capacitance-voltage hysteresis of 20.9V, one of the largest observed in Ge-NC based nonvolatile memories. The Ge NCs were fabricated in an oxide of 30nm thickness by ion implantation with 30keV Ge₂⁻ ions to an equivalent fluence of 1×10¹⁶Gecm⁻² followed by annealing at 950 °C for 10min. Secondary ion mass spectroscopy and transmission electron microscopy demonstrate...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Park_Large_capacitance-voltage_2006.pdf||Published Version||131.96 kB||Adobe PDF|
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