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Large capacitance-voltage hysteresis loops in SiO[sub 2] films containing Ge nanocrystals produced by ion implantation and annealing

Park, C. J.; Cho, K. H.; Yang, W.-C.; Cho, H. Y.; Choi, Suk-Ho; Elliman, R. G.; Han, J. H.; Kim, Chungwoo

Description

Metal-oxide-semiconductorstructures containing Genanocrystals (NCs) of 3–4nm diameter and 2×10¹²cm⁻² density are shown to exhibit capacitance-voltage hysteresis of 20.9V, one of the largest observed in Ge-NC based nonvolatile memories. The Ge NCs were fabricated in an oxide of 30nm thickness by ion implantation with 30keV Ge₂⁻ ions to an equivalent fluence of 1×10¹⁶Gecm⁻² followed by annealing at 950 °C for 10min. Secondary ion mass spectroscopy and transmission electron microscopy demonstrate...[Show more]

CollectionsANU Research Publications
Date published: 2006-02-16
Type: Journal article
URI: http://hdl.handle.net/1885/16239
Source: Applied Physics Letters
DOI: 10.1063/1.2175495

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