Skip navigation
Skip navigation

Proton-irradiation-induced intermixing of InGaAs quantum dots

Lever, P.; Jagadish, C.; Reece, P.; Gal, M.; Tan, Hark Hoe


Proton irradiation was used to create interdiffusion in In₀.₅Ga₀.₅Asquantum dots(QDs), grown by low-pressure metalorganic chemical vapor deposition. After 25-keV proton irradiation, the QD samples were annealed at two temperatures (700 or 750 °C) for 30 s. It was found that much lower annealing temperatures were needed to recover the photoluminescence signals than in the quantum-well case. Large blueshifts (120 meV) and narrowing of the photoluminescence spectra were seen. Various doses...[Show more]

CollectionsANU Research Publications
Date published: 2003-03-31
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1561153


File Description SizeFormat Image
01_Lever_Proton-irradiation-induced_2003.pdfPublished Version37.62 kBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator