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Proton-irradiation-induced intermixing of InGaAs quantum dots

Lever, P.; Tan, H. H.; Jagadish, C.; Reece, P.; Gal, M.


Proton irradiation was used to create interdiffusion in In₀.₅Ga₀.₅Asquantum dots(QDs), grown by low-pressure metalorganic chemical vapor deposition. After 25-keV proton irradiation, the QD samples were annealed at two temperatures (700 or 750 °C) for 30 s. It was found that much lower annealing temperatures were needed to recover the photoluminescence signals than in the quantum-well case. Large blueshifts (120 meV) and narrowing of the photoluminescence spectra were seen. Various doses...[Show more]

CollectionsANU Research Publications
Date published: 2003-03-31
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1561153


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