Proton-irradiation-induced intermixing of InGaAs quantum dots
Proton irradiation was used to create interdiffusion in In₀.₅Ga₀.₅Asquantum dots(QDs), grown by low-pressure metalorganic chemical vapor deposition. After 25-keV proton irradiation, the QD samples were annealed at two temperatures (700 or 750 °C) for 30 s. It was found that much lower annealing temperatures were needed to recover the photoluminescence signals than in the quantum-well case. Large blueshifts (120 meV) and narrowing of the photoluminescence spectra were seen. Various doses...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Lever_Proton-irradiation-induced_2003.pdf||Published Version||37.62 kB||Adobe PDF|
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