Ruffell, S.; Bradby, J. E.; Williams, J. S.
Phase transformations induced by indentation at different unloading rates have been studied in crystalline and amorphous silicon via Raman microspectroscopy and transmission electron microscopy. Unloading was performed at a “slow” rate of ∼0.9mN∕s which is known to create volumes of high pressure phases (Si-III and Si-XII) in crystalline silicon as well as “rapid” unloading (∼1000mN∕s), where amorphous phases are expected. Stark differences between the resulting structures are observed...[Show more]
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