High pressure crystalline phase formation during nanoindentation: Amorphous versus crystalline silicon
Phase transformations induced by indentation at different unloading rates have been studied in crystalline and amorphous silicon via Raman microspectroscopy and transmission electron microscopy. Unloading was performed at a “slow” rate of ∼0.9mN∕s which is known to create volumes of high pressure phases (Si-III and Si-XII) in crystalline silicon as well as “rapid” unloading (∼1000mN∕s), where amorphous phases are expected. Stark differences between the resulting structures are observed...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Ruffell_High_pressure_crystalline_2006.pdf||Published Version||147.48 kB||Adobe PDF|
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