Sears, K.; Buda, M.; Tan, H. H.; Jagadish, C.
We report on the lasing characteristics of three- and five-stack InAs∕GaAsquantum dot(QD) lasers grown by metal organic chemical vapor deposition. By increasing the number of stacked dot layers to 5, lasing was achieved from the ground state at 1135nm for device lengths as short as 1.5mm (no reflectivity coatings). The unamplified spontaneous emission and Z ratio as a function of injection current were also investigated. While the five-stack QD lasers behaved as expected with Z ratios of ≈2...[Show more]
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