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Solid-phase epitaxial regrowth of amorphous layers in Si(100) created by low-energy, high-fluence phosphorus implantation

Ruffell, S.; Mitchell, Ian; Simpson, P. J.


Medium energy ion scattering has been used to study the kinetics of solid-phaseepitaxial regrowth (SPEG) of ultrathin amorphous layers formed by room-temperature implantation of 5keV energy phosphorus ions into Si (100). The implants create P distributions with peak concentrations up to ∼7×10²¹cm⁻³. SPEG has been driven by rapid thermal annealing, 475°C⩽TA⩽600°C, for times up to 2000s. At each temperature, the regrowth velocity is enhanced in the early stages due to the presence of phosphorus...[Show more]

CollectionsANU Research Publications
Date published: 2005-10-27
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.2113409


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