Solid-phase epitaxial regrowth of amorphous layers in Si(100) created by low-energy, high-fluence phosphorus implantation
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Ruffell, S.; Mitchell, I. V.; Simpson, P. J.
Description
Medium energy ion scattering has been used to study the kinetics of solid-phaseepitaxial regrowth (SPEG) of ultrathin amorphous layers formed by room-temperature implantation of 5keV energy phosphorus ions into Si (100). The implants create P distributions with peak concentrations up to ∼7×10²¹cm⁻³. SPEG has been driven by rapid thermal annealing, 475°C⩽TA⩽600°C, for times up to 2000s. At each temperature, the regrowth velocity is enhanced in the early stages due to the presence of phosphorus...[Show more]
Collections | ANU Research Publications |
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Date published: | 2005-10-27 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/16205 |
Source: | Journal of Applied Physics |
DOI: | 10.1063/1.2113409 |
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01_Ruffell_Solid-phase_epitaxial_regrowth_2005.pdf | Published Version | 316.35 kB | Adobe PDF | ![]() |
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