Solid-phase epitaxial regrowth of amorphous layers in Si(100) created by low-energy, high-fluence phosphorus implantation
Medium energy ion scattering has been used to study the kinetics of solid-phaseepitaxial regrowth (SPEG) of ultrathin amorphous layers formed by room-temperature implantation of 5keV energy phosphorus ions into Si (100). The implants create P distributions with peak concentrations up to ∼7×10²¹cm⁻³. SPEG has been driven by rapid thermal annealing, 475°C⩽TA⩽600°C, for times up to 2000s. At each temperature, the regrowth velocity is enhanced in the early stages due to the presence of phosphorus...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Ruffell_Solid-phase_epitaxial_regrowth_2005.pdf||Published Version||316.35 kB||Adobe PDF|
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