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Nanopatterning of epitaxial CoSi₂ using oxidation in a local stress field and fabrication of nanometer metal-oxide-semiconductor field-effect transistors

Zhao, Q. T.; Kluth, P.; Bay, H. L.; Lenk, St.; Mantl, S.


A patterning method for the generation of epitaxialCoSi₂nanostructures was developed based on anisotropic diffusion of Co∕Si atoms in a stress field during rapid thermal oxidation (RTO). The stress field is generated along the edge of a mask consisting of a thin SiO₂ layer and a Si₃N₄ layer. During RTO of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. The technique was used to make 50-nm channel-length metal-oxide-semiconductor...[Show more]

CollectionsANU Research Publications
Date published: 2004-11-15
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1808246


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