Nanopatterning of epitaxial CoSi₂ using oxidation in a local stress field and fabrication of nanometer metal-oxide-semiconductor field-effect transistors
A patterning method for the generation of epitaxialCoSi₂nanostructures was developed based on anisotropic diffusion of Co∕Si atoms in a stress field during rapid thermal oxidation (RTO). The stress field is generated along the edge of a mask consisting of a thin SiO₂ layer and a Si₃N₄ layer. During RTO of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. The technique was used to make 50-nm channel-length metal-oxide-semiconductor...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Zhao_Nanopatterning_of_epitaxial_2004.pdf||Published Version||373.3 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.