Self-consistent electronic subband structure of undoped InAs/GaSb-based type II and broken-gap quantum well systems
Motivated by a very recent experimental work on investigating electronic properties of InAs/GaSb-based type II and broken-gap quantum well structures, in this article we present a simple and transparent theoretical approach to calculate electronic subband structure in such device systems. The theoretical model is developed on the basis of solving self-consistently the Schrödinger equation for the eigenfunctions and eigenvalues coupled with the Poisson equation for the confinement potentials, in...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Xu_Self-consistent_electronic_2007.pdf||Published Version||121.31 kB||Adobe PDF|
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