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Self-consistent electronic subband structure of undoped InAs/GaSb-based type II and broken-gap quantum well systems

Xu, W.; Folkes, P. A.; Gumbs, Godfrey

Description

Motivated by a very recent experimental work on investigating electronic properties of InAs/GaSb-based type II and broken-gap quantum well structures, in this article we present a simple and transparent theoretical approach to calculate electronic subband structure in such device systems. The theoretical model is developed on the basis of solving self-consistently the Schrödinger equation for the eigenfunctions and eigenvalues coupled with the Poisson equation for the confinement potentials, in...[Show more]

CollectionsANU Research Publications
Date published: 2007-08-01
Type: Journal article
URI: http://hdl.handle.net/1885/16196
Source: Journal of Applied Physics
DOI: 10.1063/1.2759873

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