Carrier dynamics in InP nanopillar arrays fabricated by low-damage etching
We present a comprehensive characterization of the optical quality of InP nanopillars (NPs) fabricated by a top down approach using micro-photoluminescence (μ-PL), time-resolved PL, and cathodoluminescence (CL). A lattice matched InGaAs layer provided beneath the 1 μm tall NPs functions as a “detector” in CL for monitoring carrier diffusion in InP NP. Carrier feeding to the InGaAs layer indicated by a double exponential PL decay is confirmed through CL mapping. Carrier lifetimes of over 1 ns...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Naureen_Carrier_dynamics_in_InP_2013.pdf||Published Version||1.18 MB||Adobe PDF|
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