Maximizing electrical activation of ion-implanted Si in In0.53Ga0.47As
A relationship between the electrical activation of Si in ion-implanted In₀.₅₃Ga₀.₄₇As and material microstructure after ion implantation is demonstrated. By altering specimen temperature during ion implantation to control material microstructure, it is advanced that increasing sub-amorphizing damage (point defects) from Si+ implantation results in enhanced electrical activation of Si in In₀.₅₃Ga₀.₄₇As by providing a greater number of possible sites for substitutional incorporation of Si into...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Lind_Maximizing_electrical_2013.pdf||Published Version||1 MB||Adobe PDF|
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