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Maximizing electrical activation of ion-implanted Si in In0.53Ga0.47As

Lind, A. G.; Rudawski, N. G.; Vito, N. J.; Hatem, C.; Ridgway, M. C.; Hengstebeck, R.; Yates, B. R.; Jones, K. S.

Description

A relationship between the electrical activation of Si in ion-implanted In₀.₅₃Ga₀.₄₇As and material microstructure after ion implantation is demonstrated. By altering specimen temperature during ion implantation to control material microstructure, it is advanced that increasing sub-amorphizing damage (point defects) from Si+ implantation results in enhanced electrical activation of Si in In₀.₅₃Ga₀.₄₇As by providing a greater number of possible sites for substitutional incorporation of Si into...[Show more]

CollectionsANU Research Publications
Date published: 2013-12-02
Type: Journal article
URI: http://hdl.handle.net/1885/16161
Source: Applied Physics Letters
DOI: 10.1063/1.4835097

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