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Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon

Johnson, B. C; Villis, B. J; Burgess, J. E; Stavrias, N; McCallum, Jeffrey C; Charnvanichborikarn, S; Wong-Leung, J; Jagadish, C; Williams, J. S


The dopant dependence of photoluminescence(PL) from interstitial-related centers formed by ion implantation and a subsequent anneal in the range 175–525 °C is presented. The evolution of these centers is strongly effected by interstitial-dopant clustering even in the low temperature regime. There is a significant decrease in the W line (1018.2 meV) PL intensity with increasing B concentration. However, an enhancement is also observed in a narrow fabrication window in samples implanted with...[Show more]

CollectionsANU Research Publications
Date published: 2012-05-10
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.4710991


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