Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
The dopant dependence of photoluminescence(PL) from interstitial-related centers formed by ion implantation and a subsequent anneal in the range 175–525 °C is presented. The evolution of these centers is strongly effected by interstitial-dopant clustering even in the low temperature regime. There is a significant decrease in the W line (1018.2 meV) PL intensity with increasing B concentration. However, an enhancement is also observed in a narrow fabrication window in samples implanted with...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Johnson_Dopant_effects_on_the_2012.pdf||Published Version||1.41 MB||Adobe PDF|
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