Ashrafi, Almamun; Segawa, Yusaburo
Anomalous lattice relaxation mechanics in ZnOepitaxy deposited on 6H-SiC substrates has been addressed. Thickness-dependent ZnOepitaxy showed that the lattice/strain relaxes into two steps for the layer thicknesses of (i) 10–20 nm, after overcoming the critical thickness of <6 nm and (ii) 480–1000 nm, after the complete strain relaxation. This lattice relaxation contrast has been represented with a schematic model by emphasizing on the tensile and compressive strains associated with the lattice...[Show more]
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