Anomalous lattice relaxation mechanics in ZnO/SiC heterostructure
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Ashrafi, Almamun; Segawa, Yusaburo
Description
Anomalous lattice relaxation mechanics in ZnOepitaxy deposited on 6H-SiC substrates has been addressed. Thickness-dependent ZnOepitaxy showed that the lattice/strain relaxes into two steps for the layer thicknesses of (i) 10–20 nm, after overcoming the critical thickness of <6 nm and (ii) 480–1000 nm, after the complete strain relaxation. This lattice relaxation contrast has been represented with a schematic model by emphasizing on the tensile and compressive strains associated with the lattice...[Show more]
Collections | ANU Research Publications |
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Date published: | 2008-05-09 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/16153 |
Source: | Journal of Applied Physics |
DOI: | 10.1063/1.2919587 |
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01_Ashrafi_Anomalous_lattice_relaxation_2008.pdf | 863.1 kB | Adobe PDF |
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