Anomalous lattice relaxation mechanics in ZnO/SiC heterostructure
Anomalous lattice relaxation mechanics in ZnOepitaxy deposited on 6H-SiC substrates has been addressed. Thickness-dependent ZnOepitaxy showed that the lattice/strain relaxes into two steps for the layer thicknesses of (i) 10–20 nm, after overcoming the critical thickness of <6 nm and (ii) 480–1000 nm, after the complete strain relaxation. This lattice relaxation contrast has been represented with a schematic model by emphasizing on the tensile and compressive strains associated with the lattice...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Ashrafi_Anomalous_lattice_relaxation_2008.pdf||863.1 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.