High gain single GaAs nanowire photodetector
An undoped single GaAs nanowire (NW) photodetector based on a metal–semiconductor–metal Schottky diode structure is fabricated by a focused ion beam method. The photoconductive gain of the device reaches 20 000 at low laser excitation. Bias-dependence of gain proves that the surface contributes more to the gain at higher bias because of an increased surface charge region. The spectral response demonstrates not only the band-edge absorption profile of the single GaAs NW, but also the existence...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Wang_High_gain_single_GaAs_nanowire_2013.pdf||Published Version||1.3 MB||Adobe PDF|
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