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High gain single GaAs nanowire photodetector

Wang, Hao

Description

An undoped single GaAs nanowire (NW) photodetector based on a metal–semiconductor–metal Schottky diode structure is fabricated by a focused ion beam method. The photoconductive gain of the device reaches 20 000 at low laser excitation. Bias-dependence of gain proves that the surface contributes more to the gain at higher bias because of an increased surface charge region. The spectral response demonstrates not only the band-edge absorption profile of the single GaAs NW, but also the existence...[Show more]

CollectionsANU Research Publications
Date published: 2013-08-26
Type: Journal article
URI: http://hdl.handle.net/1885/16150
Source: Applied Physics Letters
DOI: 10.1063/1.4816246

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