Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination
Download (967.22 kB)
-
Altmetric Citations
Huang, Xiaoming; Wu, Chenfei; Lu, Hai; Ren, Fangfang; Xu, Qingyu; Ou, Huiling; Zhang, Rong; Zheng, Youdou
Description
The electrical instability behaviors of a positive-gate-bias-stressed amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor(TFT) are studied under monochromatic light illumination. It is found that as the wavelength of incident light reduces from 750 nm to 450 nm, the threshold voltage of the illuminated TFT shows a continuous negative shift, which is caused by photo-excitation of trapped electrons at the channel/dielectric interface. Meanwhile, an increase of the sub-threshold...[Show more]
Collections | ANU Research Publications |
---|---|
Date published: | 2012-06-14 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/16143 |
Source: | Applied Physics Letters |
DOI: | 10.1063/1.4729478 |
Download
File | Description | Size | Format | Image |
---|---|---|---|---|
01_Huang_Electrical_instability_of_2012.pdf | Published Version | 967.22 kB | Adobe PDF |
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.
Updated: 17 November 2022/ Responsible Officer: University Librarian/ Page Contact: Library Systems & Web Coordinator