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Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination

Huang, Xiaoming; Wu, Chenfei; Lu, Hai; Ren, Fangfang; Xu, Qingyu; Ou, Huiling; Zhang, Rong; Zheng, Youdou


The electrical instability behaviors of a positive-gate-bias-stressed amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor(TFT) are studied under monochromatic light illumination. It is found that as the wavelength of incident light reduces from 750 nm to 450 nm, the threshold voltage of the illuminated TFT shows a continuous negative shift, which is caused by photo-excitation of trapped electrons at the channel/dielectric interface. Meanwhile, an increase of the sub-threshold...[Show more]

CollectionsANU Research Publications
Date published: 2012-06-14
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.4729478


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