Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer
Amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) having an ultra-thin nitrogenated a-IGZO (a-IGZO:N) layer sandwiched at the channel/gate dielectric interface are fabricated. It is found that the device shows enhanced bias stress stability with significantly reduced threshold voltage drift under positive gate bias stress. Based on x-ray photoelectron spectroscopy measurement, the concentration of oxygen vacancies within the a-IGZO:N layer is suppressed due to the...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Huang_Enhanced_bias_stress_stability_2013.pdf||Published Version||846.21 kB||Adobe PDF|
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