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Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer

Huang, Xiaoming; Wu, Chenfei; Lu, Hai; Ren, Fangfang; Chen, Dunjun; Zhang, Rong; Zheng, Youdou


Amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) having an ultra-thin nitrogenated a-IGZO (a-IGZO:N) layer sandwiched at the channel/gate dielectric interface are fabricated. It is found that the device shows enhanced bias stress stability with significantly reduced threshold voltage drift under positive gate bias stress. Based on x-ray photoelectron spectroscopy measurement, the concentration of oxygen vacancies within the a-IGZO:N layer is suppressed due to the...[Show more]

CollectionsANU Research Publications
Date published: 2013-05-13
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.4805354


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