Skip navigation
Skip navigation

Hydrogen passivation of interstitial iron in boron-doped multicrystalline silicon during annealing

Liu, AnYao; Sun, Chang; Macdonald, Daniel


Effective hydrogenation of interstitial iron in boron-doped multicrystalline silicon wafers is reported. The multicrystalline silicon wafers were annealed with plasma-enhanced chemical vapour deposited silicon nitride films, at temperatures of 400 °C – 900 °C and for times from minutes to hours. At low temperatures where a combined effect of hydrogenation and precipitation of dissolved Fe is expected, results show that the hydrogenation process dominates the effect of precipitation. The...[Show more]

CollectionsANU Research Publications
Date published: 2014-09-21
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.4901831


File Description SizeFormat Image
01_Liu_Hydrogen_passivation_of_2014.pdfPublished Version3.24 MBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  12 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator