Hydrogen passivation of interstitial iron in boron-doped multicrystalline silicon during annealing
Effective hydrogenation of interstitial iron in boron-doped multicrystalline silicon wafers is reported. The multicrystalline silicon wafers were annealed with plasma-enhanced chemical vapour deposited silicon nitride films, at temperatures of 400 °C – 900 °C and for times from minutes to hours. At low temperatures where a combined effect of hydrogenation and precipitation of dissolved Fe is expected, results show that the hydrogenation process dominates the effect of precipitation. The...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Liu_Hydrogen_passivation_of_2014.pdf||Published Version||3.24 MB||Adobe PDF|
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