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Hydrogen passivation of interstitial iron in boron-doped multicrystalline silicon during annealing

Liu, AnYao; Sun, Chang; Macdonald, Daniel

Description

Effective hydrogenation of interstitial iron in boron-doped multicrystalline silicon wafers is reported. The multicrystalline silicon wafers were annealed with plasma-enhanced chemical vapour deposited silicon nitride films, at temperatures of 400 °C – 900 °C and for times from minutes to hours. At low temperatures where a combined effect of hydrogenation and precipitation of dissolved Fe is expected, results show that the hydrogenation process dominates the effect of precipitation. The...[Show more]

CollectionsANU Research Publications
Date published: 2014-09-21
Type: Journal article
URI: http://hdl.handle.net/1885/16130
Source: Journal of Applied Physics
DOI: 10.1063/1.4901831

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