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Empirical determination of the energy band gap narrowing in p+ silicon heavily doped with boron

Yan, Di; Cuevas, Andres


In the analysis of highly doped silicon, energy band gap narrowing (BGN) and degeneracy effects may be accounted for separately, as a net BGN in conjunction with Fermi-Dirac statistics, or lumped together in an apparent BGN used with Boltzmann statistics. This paper presents an experimental study of silicon highly doped with boron, with the aim of evaluating the applicability of previously reported BGN models. Different boron diffusions covering a broad range of dopant densities were prepared,...[Show more]

CollectionsANU Research Publications
Date published: 2014-11-19
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.4902066


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