Skip navigation
Skip navigation

Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

Bullock, J.; Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.


Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n+ and p+ surfaces are passivated with SiO₂/a-Si:H and Al₂O₃/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally...[Show more]

CollectionsANU Research Publications
Date published: 2014-10-29
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.4900539


File Description SizeFormat Image
01_Bullock_Amorphous_silicon_enhanced_2014.pdfPublished Version2.75 MBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator