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Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

Bullock, James; Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

Description

Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n+ and p+ surfaces are passivated with SiO₂/a-Si:H and Al₂O₃/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally...[Show more]

CollectionsANU Research Publications
Date published: 2014-10-29
Type: Journal article
URI: http://hdl.handle.net/1885/16122
Source: Journal of Applied Physics
DOI: 10.1063/1.4900539

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