Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells
Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n+ and p+ surfaces are passivated with SiO₂/a-Si:H and Al₂O₃/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Bullock_Amorphous_silicon_enhanced_2014.pdf||Published Version||2.75 MB||Adobe PDF|
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