Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells
Download (2.75 MB)
-
Altmetric Citations
Bullock, James; Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.
Description
Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n+ and p+ surfaces are passivated with SiO₂/a-Si:H and Al₂O₃/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally...[Show more]
Collections | ANU Research Publications |
---|---|
Date published: | 2014-10-29 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/16122 |
Source: | Journal of Applied Physics |
DOI: | 10.1063/1.4900539 |
Download
File | Description | Size | Format | Image |
---|---|---|---|---|
01_Bullock_Amorphous_silicon_enhanced_2014.pdf | Published Version | 2.75 MB | Adobe PDF | ![]() |
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.
Updated: 19 May 2020/ Responsible Officer: University Librarian/ Page Contact: Library Systems & Web Coordinator