McIntosh, Keith R.; Black, Lachlan E.
This paper examines two effective surface recombination parameters: the effective surface recombination velocity Seff and the surface saturation current density J0 s . The dependence of Seff and J0 s on surface charge Q, surface dopant concentration Ns , and interface parameters is derived. It is shown that for crystalline silicon at 300 K in low-injection, Seff is independent of Ns only when Q²/Ns < 1900 cm in accumulation and Q²/Ns < 1600 cm in depletion; otherwise Seff increases with Ns ....[Show more]
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