Skip navigation
Skip navigation

On effective surface recombination parameters

McIntosh, Keith R.; Black, Lachlan E.


This paper examines two effective surface recombination parameters: the effective surface recombination velocity Seff and the surface saturation current density J0 s . The dependence of Seff and J0 s on surface charge Q, surface dopant concentration Ns , and interface parameters is derived. It is shown that for crystalline silicon at 300 K in low-injection, Seff is independent of Ns only when Q²/Ns  < 1900 cm in accumulation and Q²/Ns  < 1600 cm in depletion; otherwise Seff increases with Ns ....[Show more]

CollectionsANU Research Publications
Date published: 2014-07-07
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.4886595


File Description SizeFormat Image
01_McIntosh_On_effective_surface_2014.pdfPublished Version1.34 MBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator