Structural characteristics of GaSb∕GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition
Highly lattice mismatched (7.8%) GaAs∕GaSbnanowireheterostructures were grown by metal-organic chemical vapor deposition and their detailed structural characteristics were determined by electron microscopy. The facts that (i) no defects have been found in GaSb and its interfaces with GaAs and (ii) the lattice mismatch between GaSb∕GaAs was fully relaxed suggest that the growth of GaSbnanowires is purely governed by the thermodynamics. The authors believe that the low growth rate of...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Guo_Structural_characteristics_of_2006.pdf||Published Version||372.67 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.