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Comparative study of Cl₂, Cl₂/O₂, and Cl₂/N₂ inductively coupled plasma processes for etching of high-aspect-ratio photonic-crystal holes in InP

Carlström, C. F; van der Heijden, Rob W.; Andriesse, M. S. P.; Karouta, F.; van der Heijden, R. W.; van der Drift, E.; Salemink, H. W. M.

Description

An extensive investigation has been performed on inductively coupled plasmaetching of InP. An important motivation for this work is the fabrication of high-aspect-ratio holes for photonic crystals. The essential chemistry is based on Cl₂ with the addition of N₂ or O₂ for sidewall passivation. The influence of different process parameters such as gas flows, temperature,pressure, ion energy, and inductively coupled plasma power on the hole geometry is presented. It is concluded that photonic...[Show more]

CollectionsANU Research Publications
Date published: 2008-09-05
Type: Journal article
URI: http://hdl.handle.net/1885/16056
Source: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI: 10.1116/1.2968696

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