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Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon

Sun, Chang; Rougieux, Fiacre E.; Macdonald, Daniel


Injection-dependent lifetime spectroscopy of both n- and p-type, Cr-doped silicon wafers with different doping levels is used to determine the defect parameters of Cri and CrB pairs, by simultaneously fitting the measured lifetimes with the Shockley-Read-Hall model. A combined analysis of the two defects with the lifetime data measured on both n- and p-type samples enables a significant tightening of the uncertainty ranges of the parameters. The capture cross section ratios k = σn/σp of Cri and...[Show more]

CollectionsANU Research Publications
Date published: 2014-06-03
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.4881497


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