Ruffell, S.; Vedi, J.; Bradby, J. E.; Williams, J. S.
The effect of local hydrogen concentration on nanoindentation-inducedphase transformations has been investigated in ion-implanted amorphous silicon(a-Si). Elevated concentrations of H ranging from 5×10¹⁸ to 5×10²⁰ cm⁻³, over the depth of indentation-induced phase transformed zones have been formed in the a-Si by H ion-implantation. Indentation has been performed under conditions that result in phase transformed zones composed totally of Si-III/Si-XII in the “H-free” samples. Deformation during...[Show more]
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