Formation characteristics and photoluminescence of Ge nanocrystals in HfO[sub 2]
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Kim, Sung; Won Hwang, Sung; Choi, Suk-Ho; Elliman, R. G.; Kim, Young-Min; Kim, Youn-Joong
Description
Genanocrystals (NCs) are shown to form within HfO₂ at relatively low annealing temperatures (600–700 °C) and to exhibit characteristic photoluminescence(PL) emission consistent with quantum confinement effects. After annealing at 600 °C, sample implanted with 8.4×10¹⁵ Ge cm⁻² show two major PL peaks, at 0.94 and 0.88 eV, which are attributed to no-phonon and transverse-optical phonon replica of Ge NCs, respectively. The intensity reaches a maximum for annealing temperatures around 700 °C and...[Show more]
Collections | ANU Research Publications |
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Date published: | 2009-05-28 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/16027 |
Source: | Journal of Applied Physics |
DOI: | 10.1063/1.3132797 |
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01_Kim_Formation_characteristics_and_2009.pdf | 752.34 kB | Adobe PDF |
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