Formation characteristics and photoluminescence of Ge nanocrystals in HfO[sub 2]
Genanocrystals (NCs) are shown to form within HfO₂ at relatively low annealing temperatures (600–700 °C) and to exhibit characteristic photoluminescence(PL) emission consistent with quantum confinement effects. After annealing at 600 °C, sample implanted with 8.4×10¹⁵ Ge cm⁻² show two major PL peaks, at 0.94 and 0.88 eV, which are attributed to no-phonon and transverse-optical phonon replica of Ge NCs, respectively. The intensity reaches a maximum for annealing temperatures around 700 °C and...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Kim_Formation_characteristics_and_2009.pdf||752.34 kB||Adobe PDF|
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