Skip navigation
Skip navigation

Formation characteristics and photoluminescence of Ge nanocrystals in HfO[sub 2]

Kim, Sung; Won Hwang, Sung; Choi, Suk-Ho; Elliman, R. G.; Kim, Young-Min; Kim, Youn-Joong

Description

Genanocrystals (NCs) are shown to form within HfO₂ at relatively low annealing temperatures (600–700 °C) and to exhibit characteristic photoluminescence(PL) emission consistent with quantum confinement effects. After annealing at 600 °C, sample implanted with 8.4×10¹⁵ Ge cm⁻² show two major PL peaks, at 0.94 and 0.88 eV, which are attributed to no-phonon and transverse-optical phonon replica of Ge NCs, respectively. The intensity reaches a maximum for annealing temperatures around 700 °C and...[Show more]

dc.contributor.authorKim, Sung
dc.contributor.authorWon Hwang, Sung
dc.contributor.authorChoi, Suk-Ho
dc.contributor.authorElliman, R. G.
dc.contributor.authorKim, Young-Min
dc.contributor.authorKim, Youn-Joong
dc.date.accessioned2015-10-22T01:03:06Z
dc.date.available2015-10-22T01:03:06Z
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/16027
dc.description.abstractGenanocrystals (NCs) are shown to form within HfO₂ at relatively low annealing temperatures (600–700 °C) and to exhibit characteristic photoluminescence(PL) emission consistent with quantum confinement effects. After annealing at 600 °C, sample implanted with 8.4×10¹⁵ Ge cm⁻² show two major PL peaks, at 0.94 and 0.88 eV, which are attributed to no-phonon and transverse-optical phonon replica of Ge NCs, respectively. The intensity reaches a maximum for annealing temperatures around 700 °C and decreases at higher temperatures as the NC size continues to increase. The no-phonon emission also undergoes a significant redshift for temperatures above 800 °C. For fluences in the range from 8.4×1015 to 2.5×10¹⁶ cm⁻², the average NC size increases from ∼13.5±2.6 to ∼20.0±3.7 nm. These NC sizes are much larger than within amorphous SiO₂. Implanted Ge is shown to form Ge NCs within the matrix of monoclinic (m)-HfO₂ during thermal annealing with the orientation relationship of [101]m-HfO₂//[110]Ge NC.
dc.description.sponsorshipS.H.C. and R.G.E. acknowledge supports from the Korea Research Foundation Grant Grant No. KRF-2007-521- C00094 and from the Australian Research Council Discovery Project, respectively.
dc.format3 pages
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 22/10/15). Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.3132797
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Annealing temperatures; Fluences; Formation characteristics; Ge nanocrystals; Higher temperatures; matrix; Orientation relationship; Phonon emissions; Photoluminescence emission; Quantum confinement effects; Red shift; Thermal-annealing; Transverse optica
dc.titleFormation characteristics and photoluminescence of Ge nanocrystals in HfO[sub 2]
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume105
dc.date.issued2009-05-28
local.identifier.absfor020499
local.identifier.ariespublicationu3488905xPUB200
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationKim, Sung-I, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationHwang, Sung Won, Kyung Hee University, Korea, South
local.contributor.affiliationChoi, Suk Ho, Kyung Hee University, Korea, South
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationKim, Young-Min, Korea Basic Science Institute, Korea, South
local.contributor.affiliationKim, Youn-Joong, Korea Basic Science Institute, Korea, South
local.bibliographicCitation.issue10
local.bibliographicCitation.startpage106112
local.bibliographicCitation.lastpage3
local.identifier.doi10.1063/1.3132797
dc.date.updated2016-02-24T10:00:43Z
local.identifier.scopusID2-s2.0-66549093887
local.identifier.thomsonID000266500100188
CollectionsANU Research Publications

Download

File Description SizeFormat Image
01_Kim_Formation_characteristics_and_2009.pdf752.34 kBAdobe PDFThumbnail


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator