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Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

Chen, Z. B.; Lei, W.; Chen, B.; Wang, Y. B.; Liao, X. Z.; Tan, H. H.; Zou, J.; Ringer, S. P.; Jagadish, C.


Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here, we report that, in the droplet epitaxy of InAs/GaAs(001) QDs using metal-organic chemical vapor deposition, significant elemental diffusion from the substrate to In droplets occurs, resulting in the formation of In(Ga)As crystals, before As...[Show more]

CollectionsANU Research Publications
Date published: 2014-01-15
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.4859915


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