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Understanding pressure-induced phase-transformation behavior in silicon through in situ electrical probing under cyclic loading conditions

Fujisawa, N.; Ruffell, S.; Bradby, J. E.; Williams, J. S.; Haberl, Bianca; Warren, O. L.

Description

Cyclic indentation of crystalline silicon exhibits interesting pressure-induced phase-transformation behavior whereby sequential changes in the phase composition ultimately lead to a catastrophic (“pop-out”) event during subsequent cycles and complete transformation to high pressure Si-III and Si-XII phases. This study combines in situ electrical measurements with cyclic loading to monitor such phase-transformation behavior. We find that, if a pop-out is not observed on the unloading curve, the...[Show more]

dc.contributor.authorFujisawa, N.
dc.contributor.authorRuffell, S.
dc.contributor.authorBradby, J. E.
dc.contributor.authorWilliams, J. S.
dc.contributor.authorHaberl, Bianca
dc.contributor.authorWarren, O. L.
dc.date.accessioned2015-10-21T23:16:20Z
dc.date.available2015-10-21T23:16:20Z
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/16014
dc.description.abstractCyclic indentation of crystalline silicon exhibits interesting pressure-induced phase-transformation behavior whereby sequential changes in the phase composition ultimately lead to a catastrophic (“pop-out”) event during subsequent cycles and complete transformation to high pressure Si-III and Si-XII phases. This study combines in situ electrical measurements with cyclic loading to monitor such phase-transformation behavior. We find that, if a pop-out is not observed on the unloading curve, the end phase is predominantly amorphous but a small and increasing volume of Si-III/Si-XII results with each cycle. At a critical Si-III/Si-XII volume, pop-out can occur on a subsequent cycle, whereafter Si-III/Si-XII dominates the indent volume.
dc.description.sponsorshipThe authors would like to acknowledge WRiota Pty Ltd and the Australian Research Council for funding this project.
dc.format3 pages
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 22/10/15). Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.3130154
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Crystalline silicons; Cyclic indentation; Cyclic loading conditions; Cyclic loadings; Electrical measurement; High pressure; In-situ; Indent volume; Pressure-induced phase; Sequential changes; Transformation behavior; Unloading curves; Cyclic loads; Elect
dc.titleUnderstanding pressure-induced phase-transformation behavior in silicon through in situ electrical probing under cyclic loading conditions
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume105
dc.date.issued2009-05-26
local.identifier.absfor020499
local.identifier.ariespublicationu3488905xPUB184
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationFujisawa, Naoki, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationRuffell, Simon, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationBradby, Jodie, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationHaberl, Bianca, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationWarren, O L, Hysitron Inc, United States of America
local.bibliographicCitation.issue10
local.bibliographicCitation.startpage106111
local.bibliographicCitation.lastpage3
local.identifier.doi10.1063/1.3130154
dc.date.updated2016-02-24T10:00:26Z
local.identifier.scopusID2-s2.0-66549112439
local.identifier.thomsonID000266500100187
CollectionsANU Research Publications

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