Understanding pressure-induced phase-transformation behavior in silicon through in situ electrical probing under cyclic loading conditions
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Fujisawa, N.; Ruffell, S.; Bradby, J. E.; Williams, J. S.; Haberl, Bianca; Warren, O. L.
Description
Cyclic indentation of crystalline silicon exhibits interesting pressure-induced phase-transformation behavior whereby sequential changes in the phase composition ultimately lead to a catastrophic (“pop-out”) event during subsequent cycles and complete transformation to high pressure Si-III and Si-XII phases. This study combines in situ electrical measurements with cyclic loading to monitor such phase-transformation behavior. We find that, if a pop-out is not observed on the unloading curve, the...[Show more]
dc.contributor.author | Fujisawa, N. | |
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dc.contributor.author | Ruffell, S. | |
dc.contributor.author | Bradby, J. E. | |
dc.contributor.author | Williams, J. S. | |
dc.contributor.author | Haberl, Bianca | |
dc.contributor.author | Warren, O. L. | |
dc.date.accessioned | 2015-10-21T23:16:20Z | |
dc.date.available | 2015-10-21T23:16:20Z | |
dc.identifier.issn | 0021-8979 | |
dc.identifier.uri | http://hdl.handle.net/1885/16014 | |
dc.description.abstract | Cyclic indentation of crystalline silicon exhibits interesting pressure-induced phase-transformation behavior whereby sequential changes in the phase composition ultimately lead to a catastrophic (“pop-out”) event during subsequent cycles and complete transformation to high pressure Si-III and Si-XII phases. This study combines in situ electrical measurements with cyclic loading to monitor such phase-transformation behavior. We find that, if a pop-out is not observed on the unloading curve, the end phase is predominantly amorphous but a small and increasing volume of Si-III/Si-XII results with each cycle. At a critical Si-III/Si-XII volume, pop-out can occur on a subsequent cycle, whereafter Si-III/Si-XII dominates the indent volume. | |
dc.description.sponsorship | The authors would like to acknowledge WRiota Pty Ltd and the Australian Research Council for funding this project. | |
dc.format | 3 pages | |
dc.publisher | American Institute of Physics (AIP) | |
dc.rights | http://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 22/10/15). Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.3130154 | |
dc.source | Journal of Applied Physics | |
dc.subject | Keywords: Crystalline silicons; Cyclic indentation; Cyclic loading conditions; Cyclic loadings; Electrical measurement; High pressure; In-situ; Indent volume; Pressure-induced phase; Sequential changes; Transformation behavior; Unloading curves; Cyclic loads; Elect | |
dc.title | Understanding pressure-induced phase-transformation behavior in silicon through in situ electrical probing under cyclic loading conditions | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.identifier.citationvolume | 105 | |
dc.date.issued | 2009-05-26 | |
local.identifier.absfor | 020499 | |
local.identifier.ariespublication | u3488905xPUB184 | |
local.publisher.url | https://www.aip.org/ | |
local.type.status | Published Version | |
local.contributor.affiliation | Fujisawa, Naoki, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.contributor.affiliation | Ruffell, Simon, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.contributor.affiliation | Bradby, Jodie, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.contributor.affiliation | Williams, James, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.contributor.affiliation | Haberl, Bianca, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.contributor.affiliation | Warren, O L, Hysitron Inc, United States of America | |
local.bibliographicCitation.issue | 10 | |
local.bibliographicCitation.startpage | 106111 | |
local.bibliographicCitation.lastpage | 3 | |
local.identifier.doi | 10.1063/1.3130154 | |
dc.date.updated | 2016-02-24T10:00:26Z | |
local.identifier.scopusID | 2-s2.0-66549112439 | |
local.identifier.thomsonID | 000266500100187 | |
Collections | ANU Research Publications |
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