Effect of oxygen concentration on nanoindentation-induced phase transformations in ion-implanted amorphous silicon
The effect of the local oxygen concentration in ion-implanted amorphous Si (a-Si) on nanoindentation-inducedphase transformations has been investigated. Implantation of oxygen into the a-Sifilms has been used to controllably introduce an approximately constant concentration of oxygen, ranging from ∼10¹⁸ to ∼10²¹ cm⁻³, over the depth range of the phase transformed zones. Nanoindentation was performed under conditions that ensure a phase transformed zone composed completely of Si-III/XII in the...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Ruffell_Effect_of_oxygen_concentration_2009.pdf||756.48 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.