Photoluminescence from Si nanocrystals exposed to a hydrogen plasma
Si nanocrystals embedded in SiO₂films were exposed to an atomic H plasma at different temperatures. Photoluminescence intensity from the nanocrystals increases with increasing exposure time, followed by saturation that depends on the exposure temperature. The saturation level depends on the final exposure temperature and shows no dependence on the thermal history of exposure. This behavior is shown to be consistent with a model in which the steady-state passivation level is determined by a...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Jung_Photoluminescence_from_Si_2008.pdf||775.01 kB||Adobe PDF|
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