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Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies

Bozanic, A.; Majlinger, Z.; Petravic, M.; Gao, Q.; Llewellyn, D.; Crotti, C.; Yang, Y.-W.


Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconductor surfaces has been studied by photoemissionspectroscopy around N 1s core-level and near-edge x-ray absorption fine structure(NEXAFS) around NK edge. Interstitial molecular nitrogen N₂ has been formed in all of the samples under consideration. The presence of N₂ produces a sharp resonance in low-resolution NEXAFSspectra, showing the characteristic vibrational fine structure in high-resolution...[Show more]

CollectionsANU Research Publications
Date published: 2008-06-09
Type: Journal article
Source: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI: 10.1116/1.2929851


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