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Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies

Bozanic, A.; Majlinger, Z.; Petravic, M.; Gao, Q.; Llewellyn, D.; Crotti, C.; Yang, Y.-W.

Description

Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconductor surfaces has been studied by photoemissionspectroscopy around N 1s core-level and near-edge x-ray absorption fine structure(NEXAFS) around NK edge. Interstitial molecular nitrogen N₂ has been formed in all of the samples under consideration. The presence of N₂ produces a sharp resonance in low-resolution NEXAFSspectra, showing the characteristic vibrational fine structure in high-resolution...[Show more]

dc.contributor.authorBozanic, A.
dc.contributor.authorMajlinger, Z.
dc.contributor.authorPetravic, M.
dc.contributor.authorGao, Q.
dc.contributor.authorLlewellyn, D.
dc.contributor.authorCrotti, C.
dc.contributor.authorYang, Y.-W.
dc.date.accessioned2015-10-21T22:49:32Z
dc.date.available2015-10-21T22:49:32Z
dc.identifier.issn0734-2101
dc.identifier.urihttp://hdl.handle.net/1885/16009
dc.description.abstractFormation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconductor surfaces has been studied by photoemissionspectroscopy around N 1s core-level and near-edge x-ray absorption fine structure(NEXAFS) around NK edge. Interstitial molecular nitrogen N₂ has been formed in all of the samples under consideration. The presence of N₂ produces a sharp resonance in low-resolution NEXAFSspectra, showing the characteristic vibrational fine structure in high-resolution measurements, and at the same time, a new peak, shifted toward higher binding energies for several eV, in all N 1sphotoemissionspectra.
dc.description.sponsorshipThis work was supported by the Australian Synchrotron Research Program, which is funded by the Commonwealth of Australia under the Major National Research Facilities Program, and the Research Grant from the Ministry for Science, Education and Sport of the Republic of Croatia.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0734-2101..."Publisher's version/PDF may be used, on authors and employers website only" from SHERPA/RoMEO site (as at 22/10/15). Copyright 2008 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Vacuum Science & Technology A and may be found at https://doi.org/10.1116/1.2929851
dc.sourceJournal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
dc.subjectKeywords: Absorption; Absorption spectroscopy; Binding energy; Complexation; Electric conductivity; Electromagnetic wave absorption; Energy absorption; Law enforcement; Luminescence of organic solids; Molecules; Nitrogen; Photoelectricity; Photoemission; Semiconduc
dc.titleCharacterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume26
dc.date.issued2008-06-09
local.identifier.absfor020499
local.identifier.ariespublicationu3488905xPUB164
local.publisher.urlhttp://www.avs.org/
local.type.statusPublished Version
local.contributor.affiliationBozanic, A, University of Rijeka, Croatia
local.contributor.affiliationMajlinger, Z, University of Rijeka, Croatia
local.contributor.affiliationPetravic, M, University of Rijeka, Croatia
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationLlewellyn, David, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationCrotti, C, National Research Council (CNR) Instituto Struttura della Materia, Italy
local.contributor.affiliationYang, Y W, National Synchrotron Radiation Research Center, Taiwan
local.bibliographicCitation.issue4
local.bibliographicCitation.startpage592
local.bibliographicCitation.lastpage596
local.identifier.doi10.1116/1.2929851
dc.date.updated2015-12-09T07:19:56Z
local.identifier.scopusID2-s2.0-46449134079
local.identifier.thomsonID000257424200006
CollectionsANU Research Publications

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