Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies
Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconductor surfaces has been studied by photoemissionspectroscopy around N 1s core-level and near-edge x-ray absorption fine structure(NEXAFS) around NK edge. Interstitial molecular nitrogen N₂ has been formed in all of the samples under consideration. The presence of N₂ produces a sharp resonance in low-resolution NEXAFSspectra, showing the characteristic vibrational fine structure in high-resolution...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films|
|01_Bozanic_Characterization_of_molecular_2008.pdf||454.63 kB||Adobe PDF|
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