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Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4H-SiC

Wong-Leung, J.; Svensson, B. G.


High-purity and low-doped n -type epitaxial layers of 4H-SiC have been implanted with N and C ions by using energies in the MeV range and doses from 2×10⁸to1×10⁹cm⁻² . Postimplant annealing was performed at 1100°C prior to sample analysis by deep-level transient spectroscopy (DLTS). A drastic and irreversible instability of the prominent EH7 deep-level defect occurs during the first DLTS temperature scan because of the electric field applied during the measurements. Depending on the implanted...[Show more]

CollectionsANU Research Publications
Date published: 2008-04-09
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.2907693


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