Wong-Leung, J.; Svensson, B. G.
High-purity and low-doped n -type epitaxial layers of 4H-SiC have been implanted with N and C ions by using energies in the MeV range and doses from 2×10⁸to1×10⁹cm⁻² . Postimplant annealing was performed at 1100°C prior to sample analysis by deep-level transient spectroscopy (DLTS). A drastic and irreversible instability of the prominent EH7 deep-level defect occurs during the first DLTS temperature scan because of the electric field applied during the measurements. Depending on the implanted...[Show more]
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.