Formation of nickel-based nanocrystal monolayers for nonvolatile memory applications
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Jang, Yoo-Sung; Yoon, Jong-Hwan; Elliman, Robert G.
Description
A simple method for fabricating metal silicide nanocrystal layers with narrow spatial distributions is demonstrated and shown to produce structures suitable for nonvolatile memory applications. The method is based on high-temperature annealing of a sandwich structure comprised of a thin metal (Ni)film sandwiched between two silicon-rich oxide (SiOₓ) layers and has the feature in which the size of the NCs can be controlled by varying the silicon concentrations in the SiOₓ layers or the initial...[Show more]
dc.contributor.author | Jang, Yoo-Sung | |
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dc.contributor.author | Yoon, Jong-Hwan | |
dc.contributor.author | Elliman, Robert G. | |
dc.date.accessioned | 2015-10-21T04:20:55Z | |
dc.date.available | 2015-10-21T04:20:55Z | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | http://hdl.handle.net/1885/16005 | |
dc.description.abstract | A simple method for fabricating metal silicide nanocrystal layers with narrow spatial distributions is demonstrated and shown to produce structures suitable for nonvolatile memory applications. The method is based on high-temperature annealing of a sandwich structure comprised of a thin metal (Ni)film sandwiched between two silicon-rich oxide (SiOₓ) layers and has the feature in which the size of the NCs can be controlled by varying the silicon concentrations in the SiOₓ layers or the initial nickelfilm thickness. The typical nanocrystal diameters and densities are 3.6nm and 1.2×10¹²cm⁻², respectively. Capacitance-voltage (C-V) measurements on test structures with these characteristics are shown to have C-V characteristics suitable for nonvolatile memory applications, including a C-V memory window of 11.7V for sweep voltages between −12V and +12. | |
dc.description.sponsorship | This work was supported by the Korea Research Foundation Grant funded by the Korean Government MOEHRD, KRF-2007-313-C00269 and by the Australian Research Council through its Discovery Grant Program. | |
dc.format | 3 pages | |
dc.publisher | American Institute of Physics (AIP) | |
dc.rights | http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 21/10/15). Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2952287 | |
dc.source | Applied Physics Letters | |
dc.subject | Keywords: Annealing; Metals; Nanocrystalline alloys; Nanocrystals; Nanostructures; Nanotechnology; Nickel; Nonmetals; Silicon; Silicon compounds; High-temperature annealing; Metal silicides; Nanocrystal layers; Non-volatile-memory applications; Silicon rich oxides; | |
dc.title | Formation of nickel-based nanocrystal monolayers for nonvolatile memory applications | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.identifier.citationvolume | 92 | |
dc.date.issued | 2008-06-25 | |
local.identifier.absfor | 020499 | |
local.identifier.ariespublication | u3488905xPUB148 | |
local.publisher.url | https://www.aip.org/ | |
local.type.status | Published Version | |
local.contributor.affiliation | Jang, Y, Kangwon National University, Korea, South | |
local.contributor.affiliation | Yoon, Jong-Hwan, Kangwon National University , Korea, South | |
local.contributor.affiliation | Elliman, Robert, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.bibliographicCitation.issue | 25 | |
local.bibliographicCitation.startpage | 253108 | |
local.bibliographicCitation.lastpage | 3 | |
local.identifier.doi | 10.1063/1.2952287 | |
dc.date.updated | 2015-12-08T10:42:27Z | |
local.identifier.scopusID | 2-s2.0-46049097965 | |
local.identifier.thomsonID | 000257231200059 | |
Collections | ANU Research Publications |
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