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Formation of nickel-based nanocrystal monolayers for nonvolatile memory applications

Jang, Yoo-Sung; Yoon, Jong-Hwan; Elliman, Robert G.


A simple method for fabricating metal silicide nanocrystal layers with narrow spatial distributions is demonstrated and shown to produce structures suitable for nonvolatile memory applications. The method is based on high-temperature annealing of a sandwich structure comprised of a thin metal (Ni)film sandwiched between two silicon-rich oxide (SiOₓ) layers and has the feature in which the size of the NCs can be controlled by varying the silicon concentrations in the SiOₓ layers or the initial...[Show more]

CollectionsANU Research Publications
Date published: 2008-06-25
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.2952287


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