Formation of nickel-based nanocrystal monolayers for nonvolatile memory applications
A simple method for fabricating metal silicide nanocrystal layers with narrow spatial distributions is demonstrated and shown to produce structures suitable for nonvolatile memory applications. The method is based on high-temperature annealing of a sandwich structure comprised of a thin metal (Ni)film sandwiched between two silicon-rich oxide (SiOₓ) layers and has the feature in which the size of the NCs can be controlled by varying the silicon concentrations in the SiOₓ layers or the initial...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Jang_Formation_of_nickel-based_2008.pdf||698.1 kB||Adobe PDF|
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