Influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers
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Rudawski, N. G.; Jones, K. S.; Elliman, R. G.
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The influence of As on the evolution of mask-edge defects during stressed solid phase epitaxy of two-dimensional Si⁺ pre-amorphized regions in patterned Si wafers was examined. Mask-edge defects∼60 nm deep formed at 525 °C for As⁺ implant energies of 7.5–50 keV with peak As concentration of ∼5.0×10²⁰ cm⁻³. Defect formation was attributed to an As-enhanced [110] regrowth rate relative to the [001] regrowth rate creating an amorphous/crystalline interface geometry favorable for defect formation....[Show more]
dc.contributor.author | Rudawski, N. G. | |
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dc.contributor.author | Jones, K. S. | |
dc.contributor.author | Elliman, R. G. | |
dc.date.accessioned | 2015-10-21T04:15:05Z | |
dc.date.available | 2015-10-21T04:15:05Z | |
dc.identifier.issn | 1071-1023 | |
dc.identifier.uri | http://hdl.handle.net/1885/16004 | |
dc.description.abstract | The influence of As on the evolution of mask-edge defects during stressed solid phase epitaxy of two-dimensional Si⁺ pre-amorphized regions in patterned Si wafers was examined. Mask-edge defects∼60 nm deep formed at 525 °C for As⁺ implant energies of 7.5–50 keV with peak As concentration of ∼5.0×10²⁰ cm⁻³. Defect formation was attributed to an As-enhanced [110] regrowth rate relative to the [001] regrowth rate creating an amorphous/crystalline interface geometry favorable for defect formation. The similarity of mask-edge defect depths with As⁺ implant energy was attributed to surface retardation of [110] regrowth in shallow implants and enhanced [001] regrowth in deeper implants. Results indicate stress effects on regrowth rates are small compared to dopant effects. | |
dc.publisher | American Institute of Physics (AIP) | |
dc.rights | http://www.sherpa.ac.uk/romeo/issn/1071-1023..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 21/10/15). Copyright 2008 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Vacuum Science & Technology B and may be found at https://doi.org/10.1116/1.2775459 | |
dc.source | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | |
dc.subject | Keywords: Crystalline interface geometry; Solid phase epitaxy; Arsenic; Concentration (process); Defects; Epitaxial growth; Silicon wafers | |
dc.title | Influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.identifier.citationvolume | 26 | |
dc.date.issued | 2008-02-01 | |
local.identifier.absfor | 020499 | |
local.identifier.ariespublication | u3488905xPUB145 | |
local.publisher.url | https://www.aip.org/ | |
local.type.status | Published Version | |
local.contributor.affiliation | Rudawski, N G, University of Florida, United States of America | |
local.contributor.affiliation | Jones, K S , University of Florida , United States of America | |
local.contributor.affiliation | Elliman, Robert, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.bibliographicCitation.issue | 1 | |
local.bibliographicCitation.startpage | 435 | |
local.bibliographicCitation.lastpage | 438 | |
local.identifier.doi | 10.1116/1.2775459 | |
dc.date.updated | 2015-12-08T10:38:02Z | |
local.identifier.scopusID | 2-s2.0-38849094047 | |
local.identifier.thomsonID | 000253399000084 | |
Collections | ANU Research Publications |
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