Influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers
The influence of As on the evolution of mask-edge defects during stressed solid phase epitaxy of two-dimensional Si⁺ pre-amorphized regions in patterned Si wafers was examined. Mask-edge defects∼60 nm deep formed at 525 °C for As⁺ implant energies of 7.5–50 keV with peak As concentration of ∼5.0×10²⁰ cm⁻³. Defect formation was attributed to an As-enhanced  regrowth rate relative to the  regrowth rate creating an amorphous/crystalline interface geometry favorable for defect formation....[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures|
|01_Rudawski_Influence_of_As_on_the_2008.pdf||591.06 kB||Adobe PDF|
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