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Influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers

Rudawski, N. G.; Jones, K. S.; Elliman, R. G.


The influence of As on the evolution of mask-edge defects during stressed solid phase epitaxy of two-dimensional Si⁺ pre-amorphized regions in patterned Si wafers was examined. Mask-edge defects∼60 nm deep formed at 525 °C for As⁺ implant energies of 7.5–50 keV with peak As concentration of ∼5.0×10²⁰ cm⁻³. Defect formation was attributed to an As-enhanced [110] regrowth rate relative to the [001] regrowth rate creating an amorphous/crystalline interface geometry favorable for defect formation....[Show more]

CollectionsANU Research Publications
Date published: 2008-02-01
Type: Journal article
Source: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI: 10.1116/1.2775459


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