Rudawski, N. G.; Jones, K. S.; Elliman, R. G.
The influence of As on the evolution of mask-edge defects during stressed solid phase epitaxy of two-dimensional Si⁺ pre-amorphized regions in patterned Si wafers was examined. Mask-edge defects∼60 nm deep formed at 525 °C for As⁺ implant energies of 7.5–50 keV with peak As concentration of ∼5.0×10²⁰ cm⁻³. Defect formation was attributed to an As-enhanced  regrowth rate relative to the  regrowth rate creating an amorphous/crystalline interface geometry favorable for defect formation....[Show more]
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