Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures
CW and time-resolvedphotoluminescence measurements are used to investigate exciton recombination dynamics in GaAs∕AlGaAsheterostructurenanowires grown with a recently developed technique which minimizes twinning. A thin capping layer is deposited to eliminate the possibility of oxidation of the AlGaAs shell as a source of oxygen defects in the GaAs core. We observe exciton lifetimes of ∼1ns, comparable to high quality two-dimensional double heterostructures. These GaAsnanowires allow one to...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Perera_Nearly_intrinsic_exciton_2008.pdf||788.86 kB||Adobe PDF|
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