Effect of irradiation temperature and ion flux on electrical isolation of GaN
We study the evolution of sheet resistance of n-type GaN epilayers irradiated with MeV ¹H and ¹²C ions. Results show that both implantation temperature (varied from 77 up to 423 K) and ion beam flux affect the process of electrical isolation in the case of irradiation with ¹²C ions. This behavior is consistent with significant dynamic annealing occurring in GaN during MeV light-ion bombardment, which suggests a scenario where the centers responsible for electrical isolation are defect clusters...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Kucheyev_Effect_of_irradiation_2002.pdf||385.23 kB||Adobe PDF|
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