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Effect of irradiation temperature and ion flux on electrical isolation of GaN

Kucheyev, S. O.; Boudinov, H.; Williams, J. S.; Jagadish, C.; Li, G.


We study the evolution of sheet resistance of n-type GaN epilayers irradiated with MeV ¹H and ¹²C ions. Results show that both implantation temperature (varied from 77 up to 423 K) and ion beam flux affect the process of electrical isolation in the case of irradiation with ¹²C ions. This behavior is consistent with significant dynamic annealing occurring in GaN during MeV light-ion bombardment, which suggests a scenario where the centers responsible for electrical isolation are defect clusters...[Show more]

CollectionsANU Research Publications
Date published: 2002-04-01
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1455154


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