Kucheyev, S. O.; Toth, M.; Phillips, M. R.; Williams, J. S.; Jagadish, C.; Li, G.
Electrical isolation of n-type GaN epilayers bombarded with MeV light ions is studied by energy dispersive x-ray spectrometry(EDS). We show that the maximum bremsstrahlung x-ray energy (the Duane–Hunt limit) can be used to monitor the isolation process in GaN. This method allows the dose region above the threshold dose for isolation to be conveniently studied, whereas the application of conventional (low-voltage) electrical techniques in this dose range with large sheet resistances of the...[Show more]
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