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Indentation-induced damage in GaN epilayers

Bradby, J. E.; Kucheyev, S. O.; Williams, J. S.; Wong-Leung, Jennifer; Swain, M. V.; Munroe, P.; Li, G.; Phillips, M. R.

Description

The mechanical deformation of wurtzite GaN epilayers grown on sapphire substrates is studied by spherical indentation, cross-sectional transmission electron microscopy (XTEM), and scanning cathodoluminescence(CL) monochromatic imaging. CL imaging of indents which exhibit plastic deformation (based on indentation data) shows an observable “footprint” of deformation-produced defects that result in a strong reduction in the intensity of CL emission. Multiple discontinuities are observed during...[Show more]

dc.contributor.authorBradby, J. E.
dc.contributor.authorKucheyev, S. O.
dc.contributor.authorWilliams, J. S.
dc.contributor.authorWong-Leung, Jennifer
dc.contributor.authorSwain, M. V.
dc.contributor.authorMunroe, P.
dc.contributor.authorLi, G.
dc.contributor.authorPhillips, M. R.
dc.date.accessioned2015-10-20T05:50:33Z
dc.date.available2015-10-20T05:50:33Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/15983
dc.description.abstractThe mechanical deformation of wurtzite GaN epilayers grown on sapphire substrates is studied by spherical indentation, cross-sectional transmission electron microscopy (XTEM), and scanning cathodoluminescence(CL) monochromatic imaging. CL imaging of indents which exhibit plastic deformation (based on indentation data) shows an observable “footprint” of deformation-produced defects that result in a strong reduction in the intensity of CL emission. Multiple discontinuities are observed during loading when the maximum load is above the elastic-plastic threshold, and such a behavior can be correlated with multiple slip bands revealed by XTEM. No evidence of pressure-induced phase transformations is found from within the mechanically damaged regions using selected-area diffraction patterns. The main deformation mechanism appears to be the nucleation of slip on the basal planes, with dislocations being nucleated on additional planes on further loading. XTEM reveals no cracking or delamination in any of the samples studied for loads of up to 250 mN.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 20/10/15). Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1436280
dc.sourceApplied Physics Letters
dc.subjectKeywords: Basal planes; Cross-sectional transmission electron microscopy; Damaged region; Deformation mechanism; Elastic-Plastic; GaN epilayers; Maximum load; Mechanical deformation; Monochromatic imaging; Multiple slips; Pressure-induced phase transformations; Sap
dc.titleIndentation-induced damage in GaN epilayers
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume80
dc.date.issued2002-01-21
local.identifier.absfor020204
local.identifier.ariespublicationMigratedxPub2832
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationBradby, Jodie, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationKucheyev, Sergei, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationSwain, Michael Vincent, University of Sydney, Australia
local.contributor.affiliationMunroe, Paul, University of New South Wales, Australia
local.contributor.affiliationLi, Gang, ShenZhen Fangda GuoKe Optronics Technical Co Ltd, China
local.contributor.affiliationPhillips, Matthew R, University of Technology Sydney, Australia
local.bibliographicCitation.issue3
local.bibliographicCitation.startpage383
local.bibliographicCitation.lastpage385
local.identifier.doi10.1063/1.1436280
dc.date.updated2016-02-24T09:48:33Z
local.identifier.scopusID2-s2.0-79956019122
CollectionsANU Research Publications

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