Indentation-induced damage in GaN epilayers
The mechanical deformation of wurtzite GaN epilayers grown on sapphire substrates is studied by spherical indentation, cross-sectional transmission electron microscopy (XTEM), and scanning cathodoluminescence(CL) monochromatic imaging. CL imaging of indents which exhibit plastic deformation (based on indentation data) shows an observable “footprint” of deformation-produced defects that result in a strong reduction in the intensity of CL emission. Multiple discontinuities are observed during...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Bradby_Indentation-induced_damage_in_2002.pdf||519.17 kB||Adobe PDF|
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