Skip navigation
Skip navigation

Indentation-induced damage in GaN epilayers

Bradby, J. E.; Kucheyev, S. O.; Williams, J. S.; Wong-Leung, J.; Swain, M. V.; Munroe, P.; Li, G.; Phillips, M. R.

Description

The mechanical deformation of wurtzite GaN epilayers grown on sapphire substrates is studied by spherical indentation, cross-sectional transmission electron microscopy (XTEM), and scanning cathodoluminescence(CL) monochromatic imaging. CL imaging of indents which exhibit plastic deformation (based on indentation data) shows an observable “footprint” of deformation-produced defects that result in a strong reduction in the intensity of CL emission. Multiple discontinuities are observed during...[Show more]

CollectionsANU Research Publications
Date published: 2002-01-21
Type: Journal article
URI: http://hdl.handle.net/1885/15983
Source: Applied Physics Letters
DOI: 10.1063/1.1436280

Download

File Description SizeFormat Image
01_Bradby_Indentation-induced_damage_in_2002.pdf519.17 kBAdobe PDFThumbnail


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  23 August 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator