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Indentation-induced damage in GaN epilayers

Bradby, J. E.; Kucheyev, S. O.; Williams, J. S.; Wong-Leung, J.; Swain, M. V.; Munroe, P.; Li, G.; Phillips, M. R.


The mechanical deformation of wurtzite GaN epilayers grown on sapphire substrates is studied by spherical indentation, cross-sectional transmission electron microscopy (XTEM), and scanning cathodoluminescence(CL) monochromatic imaging. CL imaging of indents which exhibit plastic deformation (based on indentation data) shows an observable “footprint” of deformation-produced defects that result in a strong reduction in the intensity of CL emission. Multiple discontinuities are observed during...[Show more]

CollectionsANU Research Publications
Date published: 2002-01-21
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1436280


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