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Local structures of free-standing AlₓGa₁ˍₓN thin films studied by extended x-ray absorption fine structure

Yu, Kin Man; Shan, W.; Glover, C. J.; Ridgway, M. C.; Wong, William S.; Yang, W.

Description

Local structural information for the first two atomic shells surrounding Ga atoms in free standing AlₓGa₁ˍₓN alloy films has been obtained by extended x-ray absorption fine structure spectroscopy. For an AlN mole fraction ranging from 0 to 0.6, we found that the first shell Ga–N bond length had only a weak composition dependence, roughly one quarter of that predicted by Vegard’s Law. In the second shell, the Ga–Ga bond length was significantly longer than that of Ga–Al (Δ∼0.04–0.065 Å). A...[Show more]

dc.contributor.authorYu, Kin Man
dc.contributor.authorShan, W.
dc.contributor.authorGlover, C. J.
dc.contributor.authorRidgway, M. C.
dc.contributor.authorWong, William S.
dc.contributor.authorYang, W.
dc.date.accessioned2015-10-19T22:57:01Z
dc.date.available2015-10-19T22:57:01Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/15973
dc.description.abstractLocal structural information for the first two atomic shells surrounding Ga atoms in free standing AlₓGa₁ˍₓN alloy films has been obtained by extended x-ray absorption fine structure spectroscopy. For an AlN mole fraction ranging from 0 to 0.6, we found that the first shell Ga–N bond length had only a weak composition dependence, roughly one quarter of that predicted by Vegard’s Law. In the second shell, the Ga–Ga bond length was significantly longer than that of Ga–Al (Δ∼0.04–0.065 Å). A bond-type specific composition dependence was observed for the second shell cation–cation distances. While the composition dependence of the Ga–Ga bond length is ∼70% of that predicted by Vegard’s Law, the Ga–Al bond length was essentially composition independent. These results suggested that local strain in AlₓGa₁ˍₓN was also accommodated by lattice distortion in the Al cation sublattice.
dc.description.sponsorshipThis work was supported by the Director, Office of Science, Of- fice of Basic Energy Sciences, Materials Science Division of the U.S. Department of Energy under Contract No. DE-AC03-76SF00098. The LLO work was performed at the UC Berkeley Integrated Materials Laboratory which was supported in part by the National Science Foundation. C.J.G. and M.C.R. were supported by the Australian Synchrotron Research Program, funded by the Commonwealth of Australia via the Major National Research Facilities Program. SSRL was supported by the Office of Basic Energy Sciences of the U.S. Department of Energy.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 20/10/15). Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.125548
dc.sourceApplied Physics Letters
dc.titleLocal structures of free-standing AlₓGa₁ˍₓN thin films studied by extended x-ray absorption fine structure
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume75
dc.date.issued1999-12-27
local.identifier.absfor090699
local.identifier.ariespublicationMigratedxPub24983
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationYu, Kin Man, Lawrence Livermore National Laboratory, United States of America
local.contributor.affiliationShan, Wei, OptiWork, Inc., United States of America
local.contributor.affiliationGlover, Christopher, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationWong, William S, University of California, United States of America
local.contributor.affiliationYang, W, Lawrence Berkeley National Laboratory, United States of America
local.bibliographicCitation.issue26
local.bibliographicCitation.startpage4097
local.bibliographicCitation.lastpage4099
local.identifier.doi10.1063/1.125548
dc.date.updated2015-12-12T09:37:24Z
local.identifier.scopusID2-s2.0-0344027706
CollectionsANU Research Publications

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