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Effect of implant temperature on secondary defects created by MeV Sn implantation in silicon

Wong-Leung, J.; Jagadish, C.; Conway, M. J.; Fitz Gerald, J. D.


Secondary defects induced by ion implantation in silicon after annealing have been previously shown to vary with the implantation and annealing conditions. However, in the low dose implants, well below the amorphization dose, the defects have been predominantly characterized to be interstitial in nature. In this article, we study the effect of implant temperature on secondary defects created by 1 MeV Sn implantation to a dose of 3×10¹³ cm⁻² after subsequent annealing. We report a variation in...[Show more]

CollectionsANU Research Publications
Date published: 2001-03-01
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1340602


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