Millisecond minority carrier lifetimes in n-type multicrystalline silicon
Exceptionally high minority carrier lifetimes have been measured in n-type multicrystalline silicon (mc-Si) grown by directional solidification and subjected to phosphorus gettering. The highest effective lifetimes, up to 1.6 ms averaged over several grains and 2.8 ms within some of them, were measured for relatively lowly doped, 2–3 Ωcm, wafers. The lifetime was found to decrease for lower resistivities, still reaching 500 μs for 0.9 Ωcm and 100 μs for 0.36 Ωcm. Several important findings are...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Cuevas_Millisecond_minority_carrier_2002.pdf||404.33 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.