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Millisecond minority carrier lifetimes in n-type multicrystalline silicon

Cuevas, Andres; Kerr, Mark J.; Samundsett, Christian; Ferrazza, Francesca; Coletti, Gianluca


Exceptionally high minority carrier lifetimes have been measured in n-type multicrystalline silicon (mc-Si) grown by directional solidification and subjected to phosphorus gettering. The highest effective lifetimes, up to 1.6 ms averaged over several grains and 2.8 ms within some of them, were measured for relatively lowly doped, 2–3 Ωcm, wafers. The lifetime was found to decrease for lower resistivities, still reaching 500 μs for 0.9 Ωcm and 100 μs for 0.36 Ωcm. Several important findings are...[Show more]

CollectionsANU Research Publications
Date published: 2002-12-23
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1529089


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