Skip navigation
Skip navigation

Millisecond minority carrier lifetimes in n-type multicrystalline silicon

Cuevas, Andres; Kerr, Mark J.; Samundsett, Christian; Ferrazza, Francesca; Coletti, Gianluca

Description

Exceptionally high minority carrier lifetimes have been measured in n-type multicrystalline silicon (mc-Si) grown by directional solidification and subjected to phosphorus gettering. The highest effective lifetimes, up to 1.6 ms averaged over several grains and 2.8 ms within some of them, were measured for relatively lowly doped, 2–3 Ωcm, wafers. The lifetime was found to decrease for lower resistivities, still reaching 500 μs for 0.9 Ωcm and 100 μs for 0.36 Ωcm. Several important findings are...[Show more]

CollectionsANU Research Publications
Date published: 2002-12-23
Type: Journal article
URI: http://hdl.handle.net/1885/15970
Source: Applied Physics Letters
DOI: 10.1063/1.1529089

Download

File Description SizeFormat Image
01_Cuevas_Millisecond_minority_carrier_2002.pdf404.33 kBAdobe PDFThumbnail


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  12 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator