Skip navigation
Skip navigation

Numerical modeling of highly doped Si:P emitters based on Fermi–Dirac statistics and self-consistent material parameters

Altermatt, Pietro P.; Schumacher, Jürgen O.; Cuevas, Andres; Kerr, Mark J.; Glunz, Stefan W.; King, Richard R.; Heiser, Gernot; Schenk, Andreas

Description

We have established a simulation model for phosphorus-doped silicon emitters using Fermi–Dirac statistics. Our model is based on a set of independently measured material parameters and on quantum mechanical calculations. In contrast to commonly applied models, which use Boltzmann statistics and apparent band-gap narrowing data, we use Fermi–Dirac statistics and theoretically derived band shifts, and therefore we account for the degeneracy effects on a physically sounder basis. This leads to...[Show more]

CollectionsANU Research Publications
Date published: 2002-09-15
Type: Journal article
URI: http://hdl.handle.net/1885/15969
Source: Journal of Applied Physics
DOI: 10.1063/1.1501743

Download

File Description SizeFormat Image
01_Altermatt_Numerical_modeling_of_highly_2002.pdf520.17 kBAdobe PDFThumbnail


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  12 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator