Numerical modeling of highly doped Si:P emitters based on Fermi–Dirac statistics and self-consistent material parameters
We have established a simulation model for phosphorus-doped silicon emitters using Fermi–Dirac statistics. Our model is based on a set of independently measured material parameters and on quantum mechanical calculations. In contrast to commonly applied models, which use Boltzmann statistics and apparent band-gap narrowing data, we use Fermi–Dirac statistics and theoretically derived band shifts, and therefore we account for the degeneracy effects on a physically sounder basis. This leads to...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Altermatt_Numerical_modeling_of_highly_2002.pdf||520.17 kB||Adobe PDF|
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