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Flow modulation epitaxy of hexagonal boron nitride

Chugh, Dipankar; Wong-Leung, Yin-Yin (Jennifer); Li, Li (Lily); Lysevych, Mykhaylo; Tan, Hoe Hark; Jagadish, Chennupati

Description

Growth of hexagonal boron nitride (hBN) layers on 2'' sapphire substrate using metal organic vapour phase epitaxy is reported here, where we compare the growth under continuous flow and flow modulation (FM) schemes. hBN films grown under the continuous flow regime exhibit low growth rate and rough surface profiles due to severe parasitic reactions between precursor molecules, which are suppressed by adopting a FM scheme. We also observe spontaneous delamination of hBN films from the substrate...[Show more]

CollectionsANU Research Publications
Date published: 2018
Type: Journal article
URI: http://hdl.handle.net/1885/159676
Source: 2D Materials
DOI: 10.1088/2053-1583/aad5aa

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