Skip navigation
Skip navigation

Vacancy and interstitial depth profiles in ion-implanted silicon

Lévêque, P.; Nielsen, H. Kortegaard; Pellegrino, P.; Hallén, A.; Svensson, B. G.; Kuznetsov, A. Yu.; Wong-Leung, J.; Jagadish, C.; Privitera, V.

Description

An experimental method of studying shifts between concentration-versus-depth profiles of vacancy- and interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy measurements utilizing the filling pulse variation technique. The vacancy profile, represented by the vacancy–oxygen center, and the interstitial profile, represented by the interstitial carbon–substitutional carbon pair, are obtained at the same sample temperature by...[Show more]

CollectionsANU Research Publications
Date published: 2003-01-15
Type: Journal article
URI: http://hdl.handle.net/1885/15965
Source: Journal of Applied Physics
DOI: 10.1063/1.1528304

Download

File Description SizeFormat Image
01_Lévêque_Vacancy_and_interstitial_depth_2003.pdf446.65 kBAdobe PDFThumbnail


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  23 August 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator