Vacancy and interstitial depth profiles in ion-implanted silicon
An experimental method of studying shifts between concentration-versus-depth profiles of vacancy- and interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy measurements utilizing the filling pulse variation technique. The vacancy profile, represented by the vacancy–oxygen center, and the interstitial profile, represented by the interstitial carbon–substitutional carbon pair, are obtained at the same sample temperature by...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Lévêque_Vacancy_and_interstitial_depth_2003.pdf||446.65 kB||Adobe PDF|
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