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Ultrafast trapping times in ion implanted InP

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Carmody, C.; Boudinov, H.; Jagadish, C.; Lederer, M. J.; Kolev, V.; Luther-Davies, B.; Dao, Lap Van; Gal, M.; Tan, Hark Hoe

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As⁺ and P⁺implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of 1×10¹⁶ cm⁻² and p-type InP was implanted with doses between 1×10¹² and 1×10¹⁶ cm⁻². Subsequently, rapid thermal annealing at temperatures between 400 and 700 °C was performed for 30 sec. Hall-effect measurements, double-crystal x-ray diffraction, and time-resolved femtosecond...[Show more]

dc.contributor.authorCarmody, C.
dc.contributor.authorBoudinov, H.
dc.contributor.authorJagadish, C.
dc.contributor.authorLederer, M. J.
dc.contributor.authorKolev, V.
dc.contributor.authorLuther-Davies, B.
dc.contributor.authorDao, Lap Van
dc.contributor.authorGal, M.
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-10-19T03:19:44Z
dc.date.available2015-10-19T03:19:44Z
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/15963
dc.description.abstractAs⁺ and P⁺implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of 1×10¹⁶ cm⁻² and p-type InP was implanted with doses between 1×10¹² and 1×10¹⁶ cm⁻². Subsequently, rapid thermal annealing at temperatures between 400 and 700 °C was performed for 30 sec. Hall-effect measurements, double-crystal x-ray diffraction, and time-resolved femtosecond differential reflectivity showed that, for the highest-annealing temperatures, the implanted SI InP samples exhibited high mobility, low resistivity, short response times, and minimal structural damage. Similar measurements on implantedp-type InP showed that the fast response time, high mobility, and good structural recovery could be retained while increasing the resistivity.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 19/10/15). Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.1493651
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Differential reflectivity; Double crystal X-ray diffraction; Fast response time; Femtoseconds; Hall effect measurement; High mobility; InP; Ion implanted; Low resistivity; P-type; Semi-insulating; Structural damages; Time-resolved; Ultra-fast; Ultrafast o
dc.titleUltrafast trapping times in ion implanted InP
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume92
dc.date.issued2002-09-01
local.identifier.absfor090699
local.identifier.ariespublicationMigratedxPub22842
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationCarmody, C, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationBoudinov, H, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationLederer, Maximilian, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Laser Physics Centre, The Australian National University
local.contributor.affiliationKolev, Vesselin Z, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Laser Physics Centre, The Australian National University
local.contributor.affiliationLuther-Davies, Barry, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Laser Physics Centre, The Australian National University
local.contributor.affiliationDao, Lap Van, Swinburne University of Technology, Australia
local.contributor.affiliationGal, Michael, University of New South Wales, Australia
local.bibliographicCitation.issue5
local.bibliographicCitation.startpage2420
local.bibliographicCitation.lastpage2423
local.identifier.doi10.1063/1.1493651
dc.date.updated2015-12-12T09:17:38Z
local.identifier.scopusID2-s2.0-0036732172
CollectionsANU Research Publications

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